Regensburg 2007 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 23: Nano structured materials I

MM 23.4: Talk

Wednesday, March 28, 2007, 15:30–15:45, H4

Electrical Properties and Oxidation Behavior of Nanowires — •Seid Jebril, Kittitat Subannajui, Mady Elbahri, and Rainer Adelung — Chair for Multicomponent Materials, Technical Faculty, University of Kiel, Germany

The integration of nanowires into silicon chips, microstructured by conventional lithography, is still a difficult task. Either the procedures are costly or they suffer from small throughput. Lately, we suggested a cost effective method based on thin film fracture [1]. We demonstrate that this can be adopted to form reproducible nanowires between micro-contacts formed by standard lithography. Therefore, simple geometrical objects like microstructured photo-resist bars were integrated in a layout of a silicon chip. Exposing the bars to stress leads highly reproducible fracture patterns that are used as templates for a successive nanowire fabrication step. We show microchips containing integrated Au and Ni nanowires. The conductivity behavior as a function of the wire diameter and temperature is discussed, and the changes in current due to field induced as well as normal oxidation of Ni nanowires is investigated.

[1] M. Elbahri, S. K. Rudra, S. Wille, S. Jebril, M. Scharnberg, D. Paretkar, R. Kunz, H. Rui, A. Biswas, R. Adelung, Adv. Mater. 18, 1059 (2006).