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MM: Fachverband Metall- und Materialphysik

MM 32: Diffusion and point defects I

MM 32.2: Vortrag

Donnerstag, 29. März 2007, 10:30–10:45, H6

Diffusion-induced recrystallization in thin metal films — •Dietmar Baither, Britta Kruse, Tae Hong Kim, and Guido Schmitz — Westfälische Wilhelms-Universität, Institut für Materialphysik, Wilhelm-Klemm-Strasse 10, D-48159 Münster

Diffusion-induced recrystallization (DIR) was investigated in AuCu and AgPd double layers. The layers were prepared by sputter deposition on glass substrates. In spite of large lattice mismatch of 13.0 % and 5.1 % for the AuCu and AgPd system, respectively, the thin layers grow semi-coherently with (111) texture.

After heat treatment at 708 K or 723 K, various additional intensity maxima occur in the XRD spectra in dependence on the duration of heating. Simulated XRD spectra point out that these maxima cannot be explained by volume diffusion, even if a concentration-dependant diffusion coefficient is supposed. Instead, the existence of new grains with a preferred composition is favoured. Such newly formed grains were found in TEM micrographs of both systems. EDX measurements confirm the transformation of the planar interface into a granular region of distinct composition.

The evolution of the microstructure and the growth of grains with preferred discrete compositions will be described by a thermodynamical model, which considers the elastic stress and its relaxation during recrystallization.