Regensburg 2007 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 14: Metal Substrates: Epitaxy and Growth

O 14.4: Vortrag

Montag, 26. März 2007, 15:00–15:15, H39

Initial growth of Co on Cu(100) by pulsed laser deposition — •Carsten Tröppner, Andreas Dobler, and Thomas Fauster — Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen

Pulsed laser deposition (PLD) provides an increase of the instantaneous particle flux by more than 4 orders of magnitude compared to thermal deposition (TD) and particle energies up to 100 eV. In order to better understand the improved layer-by-layer growth in epitaxy of thin metal films by PLD, we investigated the system Co/Cu(001) in the submonolayer regime by scanning tunneling microscopy. For this system, Co atoms may be incorporated into the top layer of the substrate by thermally activated exchange.

After deposition at 303 K, we recorded the resulting island and defect densities as well as island-size distributions as function of coverage and particle flux for PLD and TD. Defect nucleation at incorporated Co atoms dominates the initial growth so that identical defect densities measured for both methods lead to identical island densities for a wide range of parameters. Differences in the island-size distributions and in the island densities below 0.1 monolayers are found which can be assigned to the high flux at PLD. The high particle energies enhance the adatom mobility, which suppresses the second-layer growth, and cause some sputtering.