Regensburg 2007 – scientific programme
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O: Fachverband Oberflächenphysik
O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)
O 17.19: Poster
Monday, March 26, 2007, 17:30–20:30, Poster C
Homogeneous preparation of ultrathin graphitic layers on hexagonal SiC surfaces — •Christian Riedl1, Ulrich Starke1, Jens Bernhardt2, and Klaus Heinz2 — 1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart — 2Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen
During the last years the peculiar properties of single and few-layer graphite (graphene) have attracted much interest. One method of choice to produce graphene with a high quality is the graphitization of SiC(0001)-surfaces by high temperature annealing in vacuum. The initial stage of graphitization is the (6√3× 6√3)R30∘-reconstruction whose nature is discussed controversially. Whereas this structure is often entitled as (6× 6) we explicitly show by means of Low Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM) that the true periodicity of this inherent surface reconstruction is indeed (6√3× 6√3)R30∘. The characteristic properties of graphene develop with the first layer of graphite on top of the (6√3× 6√3)R30∘-structure. We analyze the growth of graphite layers by Auger Electron Spectroscopy (AES), LEED and STM. A different number of graphite layers results in a different corrugation in the STM-topography.