Regensburg 2007 – scientific programme

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O: Fachverband Oberflächenphysik

O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)

O 17.1: Poster

Monday, March 26, 2007, 17:30–20:30, Poster C

Growth and characterization of carbon nanotubes on silicon carbide — •Reinhard Volkmer, Alexander Hartung, and Bernd Schröter — FSU Jena, IFK, Max-Wien-Platz 1, 07743 Jena

Due to their remarkable mechanical and electronical properties, carbon nanotubes (CNTs) have acquired a significant position in the field of nano research since the discovery in 1991. The defined growth of these tubes is an essential requirement for their utilization in nanoelectronics and nanooptics. Though CNTs with various parameters such as diameter, length, chirality or number of walls can already be produced in great quantities by standard practices like arc discharge, chemical vapor deposition (CVD) and laser ablation, the task of placing single tubes with the desired properties like chirality at defined positions is a not yet solved problem.

We used an alternative fabrication technique by growing carbon nanotubes on SiC(0001) surfaces in ultra high vacuum (UHV) [1]. The UHV environment allows the diversified characterization of the substrate surfaces and CNTs by means of microscopy (STM, AFM, SEM), spectroscopy (XPS) and electron diffraction (LEED) and pulls together the parameters of growth conditions and properties of the CNTs. We succeeded in growing single wall and Y-junction nanotubes at temperatures of about 1500°C whose position, alignment and characteristics depend on the substrate geometry and which feature a high purity because of the omission of catalysts in this technique.

[1] V. Derycke, R. Martel, M. Radosavljevic, F. M. Ross and Ph. Avouris, Nano Lett., Vol. 2, No. 10, 1043 (2002)