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O: Fachverband Oberflächenphysik

O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)

O 17.5: Poster

Montag, 26. März 2007, 17:30–20:30, Poster C

Metallic nanostructures on silicon — •Jan Rönspies, Tammo Block, Svend Vagt, and Herbert Pfnür — Institut für Festkörperphysik, Abteilung Oberflächen, Leibniz Universität Hannover, Appelstr.2, 30167 Hannover, Germany

In our experiment we produced nanowires by a lithographic process with electron-beam stimulated thermal desorption of oxygen (EBSTD) in UHV from an ultrathin SiO₂ layer deposited on Si(557) substrates. Recently the Pb/Si(557) system was shown to exhibit a quasi one-dimensional conductance along the Si(557) step direction on a macroscopic scale, associated with a metal-semiconductor phase transition.

The electronic properties of low–dimensional systems are intimately related to their geometric structure. In ideal one dimensional systems the electron confinement is important. Particularly in one-dimensional systems the enhanced interaction is accompanied by instabilities, which can be seen by metal-insulator transitions measurements.

We apply EBSTD to bare windows of clean silicon with lateral dimensions down to 10nm in the oxide layer. Subsequent metal epitaxy leads to the formation of continuous thin metal nanowires in the window areas. We formed nanowires with a length of several hundred nanometers by using this lithographical method to perform measurements on only a few of these wires selected out of the "wire array" of the Pb/Si(557) system. We present first results of conductivity of such wires.