Regensburg 2007 – scientific programme

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O: Fachverband Oberflächenphysik

O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)

O 17.9: Poster

Monday, March 26, 2007, 17:30–20:30, Poster C

Stepped Si(111) surfaces as template for the growth of nanostructures — •Vasily Cherepanov, Konstantin Romanyuk, and Bert Voigtländer — Institute of Bio and Nanosystems (IBN 3), and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

The preparation of template surfaces is a crucial step for the growth of nanostructures by self organization. A template surface with a desired arrangement of monoatomic steps can be used subsequently for deposition of materials which preferentially incorporate at the step edges. In this study we optimized the conditions to produce regular array of the slip steps on various inclined Si wafers. Applied external stress to a Si wafer forms an array of (112) slip steps at Si(111) surface. New steps form by gliding crystal planes in the bulk during plastic relaxation of the wafer. Those new steps intersect with the surface steps which originate from the miscut of the wafer. Thus a network of "crossing" steps is formed at Si(111) surface. Subsequent step-flow growth of Ge can be used to produce a network of crossing Ge wires attached to the stepped template. Ge deposition on Bi terminated stepped Si surface was used to produce a network of crossing Ge nanowires on the atomic scale.