O 24: Semiconductor Substrates: Epitaxy and Growth
Dienstag, 27. März 2007, 11:15–12:45, H39
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11:15 |
O 24.1 |
Ultrafast Electron Diffraction of epitaxial Bi(111) films on Si(001) — •Anja Hanisch, Boris Krenzer, and Michael Horn-von Hoegen
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11:30 |
O 24.2 |
Lattice accommodation by a periodic array of interfacial misfit dislocations in Bi(111)/Si(001) heteroepitaxy — •Giriraj Jnawali, Hichen Hattab, Frank M. zu Heringdorf, Boris Krenzer, and Michael Horn von Hoegen
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11:45 |
O 24.3 |
Symmetry breaking in the growth of 2D Ge islands on Bi/Si(111) — •Konstantin Romanyuk and Bert Voigtländer
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12:00 |
O 24.4 |
Epitaxial growth of Aluminium on Silicon (111) studied by SPA-LEED and STM — •Thomas Payer, Christian Wiethoff, and Michael Horn-von Hoegen
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12:15 |
O 24.5 |
Self-organized thickness engineering of Al thin films by alternation of dense and diluted atomic layers — •Ying Jiang, Kehui Wu, Zhe Tang, Philipp Ebert, and Enge Wang
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12:30 |
O 24.6 |
Untersuchung der Homoepitaxie auf GaAs(001) mit Molekularstrahlepitaxie und in-situ-STM — •Sylvia Hagedorn, Jan Grabowski, Holger Eisele und Mario Dähne
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