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O: Fachverband Oberflächenphysik

O 32: Semiconductor Substrates

O 32.7: Vortrag

Dienstag, 27. März 2007, 17:15–17:30, H39

Investigations of Ga adsorption on Si(113) with scanning tunneling microscopy — •Moritz Speckmann, Thomas Schmidt, Subhashis Gangopadhyay, David Krueger, Torben Clausen, and Jens Falta — Institute of Solid State Physics, University of Bremen,

High index surfaces are of strong interest in today‘s research because they are supposed to be a candidate for self-assembling systems, for example nano wires.

In this work the adsorption of Ga on Si(113) has been investigated in dependence on the growth temperature. After Ga adsorption one discovers two kinds of facets on the surface. We used scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) to characterise the facets regarding their properties like length, heigth, width, and their tilt to the (113) surface as well as surface reconstructions.

The facets grow in [110]-direction. Depending on temperature a very regular arrangement of facets can be achieved. Due to their tilt towards the (113) surface and their surface reconstructions they are identified as (112) and (115) facets. We observed mainly (6×1) and (4×1) reconstructions on the (112) facets and on the (115) facets, respectively. Regarding their dimensions both facets are found to be strongly influenced by the growth temperature, whereat the (112) facets seem to be thermally more stable than the (115) facets. The STM images and the corresponding LEED images give hints that the (115) facets merge into (114) or (227) facets at temperatures of 600^∘C and higher.