Regensburg 2007 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 33: Oxides and Insulators: Epitaxy and Growth

O 33.4: Vortrag

Dienstag, 27. März 2007, 16:30–16:45, H41

Preparation and Investigation of well ordered thick Silica films on Mo(112) — •Martin Baron, Dario Stacchiola, Sarp Kaya, Shamil Shaikhutdinov, and Hajo Freund — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany

Recently our group has demonstrated the preparation of well ordered thin silica films on Mo(112) substrate [1]. The structure of the film has been determined employing varies experimental techniques and theoretical calculations [2]. In this work we use a similar approach for growth of thicker silica films which resemble the structure and properties of bulk silica. The experimental results of XPS, IRAS, STM and LEED will be presented.

[1] Schroeder T, Adelt M, Richter B, et al., SURFACE REVIEW AND LETTERS 7 (1-2): 7-14 FEB-APR 2000

[2] Todorova TK, Sierka M, Sauer J, et al., PHYSICAL REVIEW B 73 (16): Art. No. 165414 APR 2006