Regensburg 2007 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Poster Session II (Semiconductors; Oxides and Insulators: Adsorption, Clean Surfaces, Epitaxy and Growth; Surface Chemical Reactions and Heterogeneous Catalysis; Surface or Interface Magnetism; Solid-Liquid Interfaces; Organic, Polymeric, Biomolecular Films; Particles and Clusters; Methods: Atomic and Electronic Structure; Time-resolved Spectroscopies)
O 44.63: Poster
Mittwoch, 28. März 2007, 17:00–19:30, Poster C
Improvement of the thermal stability of the HfO2/Si(100) system using a diffusion barrier — •D. Weier1, A. deSievro2,3, M. Schürmann1, C. Flüchter1, M. Carazzolne3, A. Pancotti3, R. Landers2,3, G. Kleiman3, and C. Westphal1 — 1Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund, Germany — 2Laboratório Nacional de Luz Síncrotron, C.P. 6192, 13084-971 Campinas, SP, Brazil — 3Instituto de Física - Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP, Brazil
The ongoing miniaturisation of transistor devices requires a new gate dielectric to replace silicon oxide (SiO2) that has been used for the last decades. The possible substitutes have to fulfill several requirements like band gap alignment to the silicon, a good interface quality, and a thermal stability. HfO2 meets most of the requirements, but it is shown in many studies that it’s thermal stability is one of the main problems of the system HfO2/Si(100) due to silicide formation at high temperature annealing. In this work a film of silicon nitride was deposited on the silicon substrate via sputtering and annealing. The silicon nitride (Si3N4) is stable when a high temperature annealing up to approximately 1100 ∘C is applied. Thus, it can be used as a diffusion barrier for the HfO2 in the high temperature range. We will show several heating cycles for different diffusion barrier thicknesses and we compare them with similar cycles for HfO2/Si(100) films without a diffusion barrier. It will be shown that it is possible to increase the thermal stability of HfO2 with a Si3N4 layer.