Regensburg 2007 – scientific programme
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O: Fachverband Oberflächenphysik
O 5: Nanostructures at Surfaces I (Wires, Tubes)
O 5.2: Talk
Monday, March 26, 2007, 11:30–11:45, H36
Atomic-force microscopy investigations of semiconductor nanorods — Y. Hou1, •C. Teichert1, G. Brauer2, A. Djurisic3, V. Sivakov4, R. Scholz4, G. Andrä5, and S. H. Christiansen6 — 1Institute of Physics, University of Leoben, Austria — 2Institut f. Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Germany — 3Department of Physics, University of Hong Kong, PR China — 4Max Planck Institute of Microstructure Physics, Halle, Germany — 5Institute of Physical High Technology (IPHT), Jena, Germany — 6Physics Department, Martin-Luther-University Halle-Wittenberg, Germany
One-dimensional nanostructures, such as nanorods or nanotubes, exhibit technological potential for many device applications like electronic, photonic or sensing devices. However, achieving control on the growth of such nanostructures leading to proper dimensional confinement (nanorods diameter, length, density and orientation) is still a challenging task. So far, scanning electron microscopy and transmission electron microscopy are the methods of choice to characterize arrays of free standing semiconductor nanowires. Atomic force microscopy - at a first glance - might not be suited for such a task. Analyzing arrays of vertical ZnO nanorods grown on Si and ITO substrates and individual Si nanowhiskers grown by electron beam evaporation on Si(111), we demonstrate the capabilities of atomic-force microscopy to yield integral information for example on the height variation of the nanorod arrays as well as detailed information on the facet structure of the nanowhiskers.