Regensburg 2007 – scientific programme

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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices

SYOE 8: Poster Session SYOE

SYOE 8.32: Poster

Tuesday, March 27, 2007, 18:00–20:00, Poster B

Structure and Morphology of Highly Ordered Organic Films of PTCDI-C₈ on SiO₂ — •Tobias Krauss¹, Esther Barrena^1,2, Dimas Garcia de Oteyza¹, Xue Na Zhang¹, János Major¹, Volker Dehm³, Frank Würthner³, and Helmut Dosch^1,2 — ¹Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, 70569 Stuttgart, Germany — ²Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57 — ³Institut für Organische Chemie, Universität Würzburg, Am Hubland 97074, Würzburg

For organic electronics there is a particular need of molecules with n-type behavior in order to enable the fabrication of complimentary circuits and ambipolar transistors. A remarkable high electron carrier mobility of 0.6 cm² V⁻¹ s⁻¹ was reported for OFETs based on PTCDI-C₈ (N,N*-dioctyl-3,4,9,10-perylene tetracarboxylic diimide) films making this molecule a promising candidate for organic n-type semiconductors. In this work we present for the first time a complete characterization of the structure of PTCDI-C₈ films deposited on SiO₂ by means of specular x-ray diffraction and grazing incidence x-ray diffraction (GIXD). We provide the optimized conditions for growth of PTCDI-C₈ films with an outstanding degree of crystalline order and discuss the thermal behavior of their structural properties.