Regensburg 2007 – scientific programme
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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices
SYOE 8: Poster Session SYOE
SYOE 8.88: Poster
Tuesday, March 27, 2007, 18:00–20:00, Poster B
Organic field effect transistors with rubrene — •Thomas Diekmann, Soraja Bondi-Fernandez, and Ulrich Hilleringmann — University of Paderborn, Department of Electrical Engineering EIM-E, 33098 Paderborn
While much research work is focused on the deposition of organic materials like small molecules by thermal evaporation in high vacuum this work shows results of a deposition process at backing pressure in inert gas atmosphere. First transistors are built on a silicon substrate which serves at the same time as common gate electrode. For gate dielectric thermally grown silicon dioxide is used with a layer thickness of 138 nm. Drain and source electrodes of gold are structured by UV-lithography and lift-off. At backing pressure in inert gas atmosphere small crystals of rubrene could be introduced into the transistor channel. In this way organic field effect transistors are fabricated that can drive a drain source current of about -44µA @ VGS = VDS = -40 V.