Regensburg 2007 – scientific programme
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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices
SYOE 8: Poster Session SYOE
SYOE 8.90: Poster
Tuesday, March 27, 2007, 18:00–20:00, Poster B
Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer — Michael Scharnberg1, Vladimir Zaporojtchenko1, •Rainer Adelung1, Franz Faupel1, Christoph Pannemann2, Thomas Diekmann2, and Ulrich Hilleringmann2 — 1for Multicomponent Materials, Technical Faculty, University of Kiel, Germany — 2Department EIM-E, Sensor Technology, University of Paderborn, Germany
High threshold voltages are a major problem for the realization of organic field effect transistors (OFETs). It was shown, that dual-gate FET structures allow to shift the threshold voltage. Here, we present a technique to adjust the threshold voltage of an OFET using a design similar to a dual-gate structure with an insulating Teflon-based electret layer as a second gate. The threshold voltage of a pentacene bottom gate OFET was shifted from +13.1 V to -2.3 V by deposition of a 1.7 µ m thick electret layer proving the principal feasibility of this approach [1].
[1] M. Scharnberg, V.Zaporojtchenko, R. Adelung, F. Faupel, T. Diekmann, C. Pannemann, and U. Hilleringmann, Appl. Phys. Lett. 90 (2007) in press