Regensburg 2007 – scientific programme

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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices

SYOE 8: Poster Session SYOE

SYOE 8.93: Poster

Tuesday, March 27, 2007, 18:00–20:00, Poster B

Hysteresis in Bio-Organic Field-Effect Transistors — •Stadler Philipp¹, Birendra Singh¹, Reinhard Schwoediauer², Siegfried Bauer², James Grote³, and Serdar Sariciftci¹ — ¹LIOS Altenbergerstr. 69., 4040 Linz, Austria — ²SOMAP Altenbergerstr. 69., 4040 Linz, Austria — ³AFRL/MLPS, Wright-Patterson Air Force Base, Ohio USA

In organic field effect transistors (OFETs) the gate dielectric plays a crucial role - highly insulating thin film polymer layers are key-components in state of the art organic transistor devices. When replacing the polymer layer by introducing solution-processed thin film surfactant-modified biopolymer Desoxyribonucleic Acid (DNA) as gate dielectric [1], transistor-characteristics are changed towards remanence-like hystheresis behaviours. The hysteresis-loops probed in bio-organic field effect transistors (BiOFETs) derived from DNA and fullerene derivatives form bistable states which can be used for memory devices at low operating voltage regime compared to similar organic thin film transistors using polymers as gate insulator. Bulk-interface interactions have been reported in various space-charge electrets without ferroelectric-like properties and - in the case of DNA - are probed with sandwich devices of pristine biopolymer (Metal-Insulator-Metal) as well as sandwich devices with biopolymer and semiconducting fullerene derivative (Metal-Insulator-Semiconductor-Metal) and bottom gate top electrode OFET devices itself. [1] T. B. Singh et al., Appl. Phys. Lett. 85, 5409 (2004).