Regensburg 2007 – scientific programme
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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices
SYOE 8: Poster Session SYOE
SYOE 8.97: Poster
Tuesday, March 27, 2007, 18:00–20:00, Poster B
Electrical and morphological characterization of sub-micrometer organic transistors — •F. Ante1, S. Issing1, J. Geurts1, G. Schmidt1, L.W. Molenkamp1, N.S. Oxtoby2, M. Mas-Torrent2, N. Crivillers2, J. Veciana2, and C. Rovira2 — 1Universität Würzburg, Physikalisches Institut (EP3), Am Hubland, D-97074 Würzburg, Germany — 2Institut de Ciencia de Materials de Barcelona (CSIC), Campus UAB, 08193 Cerdanyola, Spain
We report on electrical and morphological characterization studies of tetrathiafulvalene (TTF) derivatives for sub-micron organic thin film transistors (OTFTs). The electrical properties of the vacuum deposited materials on highly n-doped silicon wafers with thermally grown SiO2 were measured in bottom contact geometry with e-gun evaporated metal contacts. The channel length was varied from 20 µm to 0.5 µm for 50 nm thick oxide using optical lithography. Smaller devices with channel length from 1000 nm to 80 nm were fabricated on 10 nm thick oxide with electron beam lithography. We present typical output and transfer characteristics for long and short channel devices and analyzed their scaling behaviour. Charge carrier mobilities above 10−2 cm2/Vs were extracted. In situ studies during growth indicate an increase of mobility with thickness over the investigated range. From this result and from an AFM analysis we conclude 3D crystalline growth. Furthermore we give a correlation between grain sizes and device performance. We acknowledge support by the EU Integrated Project NAIMO (No NMP4-CT-2004-500355), DGI Spain (CTQ2006-06333/BQU) and CIRIT (2005SGR-005951).