Regensburg 2007 – wissenschaftliches Programm
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SYSS: Symposium Spins in Semiconductors
SYSS 1: Spins in Semiconductors
SYSS 1.3: Hauptvortrag
Montag, 26. März 2007, 10:20–10:40, H1
Spin-orbit interaction in Si quantum wells — •Wolfgang Jantsch1, Hans Malissa1, and Zbyslaw Wilamowski2 — 1Johannes Kepler Universität, Linz, Austria — 2Inst. Physics, Pol. Academy of Sciences, Warsaw, Poland
Spin-orbit interaction (SOI) in Si is by 3 orders of magnitude weaker than in typical III-V compounds. Nevertheless spin relaxation and decoherence in a modulation doped Si quantum well are dominated by SOI. The long decoherence time allows for standard ESR experiments which permit access also to other SOI effects: a dc current is shown to shift the resonance frequency up or down, depending on the relative orientation of the current and magnetic field. This effect arises from the drift velocity of the electrons which causes an additional Bychkov-Rashba field [1] via SOI. We show that due to the same mechanism, a high frequency current produces an hf magnetic field that allows spin manipulation at by orders of magnitude higher efficiency than by the microwave magnetic field in an ESR setup.
[1] Yu. L. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)