Berlin 2008 –
wissenschaftliches Programm
DF 12: Dielectric and ferroelectric thin films and nanostructures II
Donnerstag, 28. Februar 2008, 10:00–13:00, EB 107
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10:00 |
DF 12.1 |
Hauptvortrag:
Piezoelectric ceramic materials - a success story — •Dieter Sporn, Andreas Schönecker, Bernhard Brunner, and Horst Beige
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10:40 |
DF 12.2 |
Thickness dependence of leakage current through capacitor stacks with high-k materials for DRAM application — •Herbert Schroeder
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11:00 |
DF 12.3 |
Leakage spot evolution in thin (ZrO2)0.8(Al2O3)0.2 -films observed by conductive atomic force microscopy (CAFM) — •Dominik Martin, Oliver Bierwagen, Matthias Grube, Lutz Geelhaar, and Henning Riechert
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11:20 |
DF 12.4 |
The influence of image potential on defect assisted leakage mechanisms — •Grzegorz Kozlowski and Jarek Dabrowski
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11:40 |
DF 12.5 |
The mechanisms of leakage current in BaHfO3 films — •Grzegorz Kozlowski, Jarek Dabrowski, Grzegorz Lupina, Gunther Lippert, Piotr Dudek, and Hans-Joachim Müssig
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12:00 |
DF 12.6 |
On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon — •Olaf Seifarth, Christian Walczyk, Grzegorz Lupina, Jaroslaw Dabrowski, Günter Weidner, Peter Zaumseil, Dieter Schmeißer, Peter Storck, Hans-Joachim Müssig, and Thomas Schroeder
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12:20 |
DF 12.7 |
Transition metal oxide based NVM for IHPs 0.13 micron BiCMOS technology — •Rakesh Sohal, Christian Walczyk, Ioan Costina, Peter Zauseil, Alexander Fox, and Thomas Schroeder
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12:40 |
DF 12.8 |
Space charge polarization in solid electrolytes — •Björn Martin and Herbert Kliem
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