Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DF: Fachverband Dielektrische Festkörper

DF 12: Dielectric and ferroelectric thin films and nanostructures II

DF 12.5: Talk

Thursday, February 28, 2008, 11:40–12:00, EB 107

The mechanisms of leakage current in BaHfO₃ films — •Grzegorz Kozlowski, Jarek Dabrowski, Grzegorz Lupina, Gunther Lippert, Piotr Dudek, and Hans-Joachim Müssig — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

We present the results of theoretical and experimental study of leakage currents through ultrathin dielectric BaHfO₃ films in MIM (Metal-Insulator-Metal) capacitor structures. Ab initio calculations have been performed for defects and impurities, and standard electrical measurements have been done in order to reveal the physical processes governing the transport of charge carriers across the film. The dominating leakage mechanism clearly depends on temperature, voltage, and film thickness. Statistical analysis of leakage currents provides further information on the character of the responsible defects, e.g., allowing us to attribute the leakage at given conditions to microscopic or macroscopic defects. We confront the results of this experimental data analysis with the ab initio data and we discuss the implications on the film deposition and processing.