Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 12: Dielectric and ferroelectric thin films and nanostructures II

DF 12.6: Talk

Thursday, February 28, 2008, 12:00–12:20, EB 107

On the electronic and dielectric characterisation of thin cubic PrO₂ layers on Silicon — •Olaf Seifarth¹, Christian Walczyk¹, Grzegorz Lupina¹, Jaroslaw Dabrowski¹, Günter Weidner¹, Peter Zaumseil¹, Dieter Schmeißer², Peter Storck³, Hans-Joachim Müssig¹, and Thomas Schroeder¹ — ¹IHP microelectronics, 15236 Frankfurt (Oder), Germany — ²Brandenburg Technical University, 03046 Cottbus, Germany — ³Siltronic AG, 81737 München, Germany

For the integration of 100 % Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO₂ is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO₂ and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO₂ layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.