Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 13: Dielectric and ferroelectric thin films and nanostructures III

DF 13.5: Talk

Thursday, February 28, 2008, 15:20–15:40, EB 107

Surface preparation of TiN electrodes for subsequent HfO2-based high-k dielectrics deposition. — •Peter Dudek, Grzegorz Lupina, Thomas Schroeder, and Hans-Joachim Muessig — IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) / Germany

High-k dielectrics combined with compatible metal electrodes are significant material research approaches to scale down dynamic random access memories (DRAM). Accordingly, TiN-based electrodes require strict control of the surface chemistry to avoid the presence of performance limiting interfacials1. Recent studies show an interfacial layer present on the TiN electrode forming TiN/TiONx/TiO2 materials stack. Different etching methods for interface removal have been applied and characterised by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Direct comparison of high-k dielectric properties on treated and as-deposited TiN electrode is the objective of research.

[1] Schroeder et al. J.Appl.Phys. 102, (2007).