Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 13: Dielectric and ferroelectric thin films and nanostructures III

DF 13.8: Talk

Thursday, February 28, 2008, 16:20–16:40, EB 107

Computer-simulated Fullerene-based dielectric materials: Ways to improve the properties of the generated ultralow-k structures — •Kostyantyn Zagorodniy, Helmut Hermann, and Manfred Taut — Leibniz Institute for Solid State and Materials Research, IFW Dresden, PF 270116, D-01171 Dresden, Germany

Insulating low-k dielectric materials are needed to minimize cross-talk between metal interconnects in microelectronic products. The continuous shrinking of device dimensions of ultra-large-scale integrated (ULSI) chips imposes strong demands on the backend of the line (BEoL) interconnect structures. The International Technology Roadmap for Semiconductors (ITRS) indicates that the k values need to be reduced to 2.0 for the 45 nm technology node or bellow in the next few years. Additionally to extremely low dielectric constants, new insulating materials must have also suitable mechanical properties. We have recently proposed the model for new ultralow-k dielectrics as an ordered three-dimensional network consisting of two components: C60 Fullerenes as nodes and bridge molecules as edges connecting the nodes. In the present work we analyze the generated structures in order to improve mechanical and electronic properties. Substituting of the bridge molecules and varying the ways of connecting them to the C60 molecule the mechanical and electronic properties of the model can be affected. Classical and quantum-chemical methods are used to optimize the structures and to calculate its properties. Possible improvements and the limitations are discussed.