Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DF: Fachverband Dielektrische Festkörper

DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics

DF 4.2: Invited Talk

Monday, February 25, 2008, 14:40–15:05, EB 107

Molecular Beam Epitaxy of crystalline oxides on Si for C-MOS and for the monolithic integration of semiconductors on Silicon — •Saint-Girons Guillaume¹, Merckling Clément¹, El-Kazzi Mario¹, Becerra Loic¹, Regreny Philippe¹, Patriarche Gilles², Largeau Ludovic², Favre-Nicolin Vincent³, and Hollinger Guy¹ — ¹INL/UMR5270-Site ECL, 36 av Guy de Collongue, 69134 Ecully cedex, France — ²LPN UPR20/CNRS Route de Nozay, 91460 Marcoussis cedex — ³cCEA/DRFMC/SP2M, 17 rue des Martyrs 38054 Grenoble and UJF, BP53, 38041 Grenoble cedex 9, France

In this contribution, a detailed description of the growth mechanisms and structural properties of high-k Al₂O₃, Gd₂O₃ and amorphous LaAlO₃ on Si will be presented. On the basis of these studies, relevant oxide/Si systems will be proposed that fulfill the requirements of future C-MOS systems. In particular, very promising electrical characteristics have been obtained showing that the (amorphous LaAlO₃)/Si system is compatible with ITRS recommendations in terms of EOT and leakage current. Moreover, it will also be shown that InP/oxide heterointerfaces present a quasi-ideal compliant behavior that opens the way to the monolithic integration of III-V heterostructures on Si for advanced micro and optoelectronic applications.