Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics

DF 4.5: Invited Talk

Monday, February 25, 2008, 16:10–16:35, EB 107

AVD and ALD developments for next generation MIM capacitors and memory applications — Peter K. Baumann, Christoph Lohe, and •Michael Heuken — AIXTRON AG, Aachen, Germany

Atomic layer deposition (ALD) enables deposition of electrode, dielectric and barrier layers on high aspect ratio trench structures and has been widely used. However, due to its nature the throughput is typically limited. Atomic vapor deposition (AVD^®) is a special type of metal organic vapor deposition (MOCVD) that enables deposition with high precursor gas phase saturation. This results in improved throughput while maintaining conformal deposition on moderate aspect ratio trench structures. Based on the International Roadmap for Semiconductors (ITRS) for front end, for DRAM at the 50nm and below technology node metal-insulator-metal (MIM) structures will be required [1]. Also conformal step coverage on structures with aspect ratios of 1:60 and higher as well as an equivalent oxide thickness (EOT) of less than 1nm will be necessary. Other memory applications (e.g. phase change memory) require less advanced aspect ratios, opening possibilities for AVD^®. ALD and AVD^® have been used to deposit electrode and dielectric films based on e.g. TiN, Ru, TaSiN as well as HfO₂, ZrO₂, Al₂O₃. Results for the different deposition techniques and various process conditions will be presented and compared considering use for memory applications.

[1] Front end, International Roadmap for Semiconductors (Semiconductor Industry Association, Palo Alto 2006 update ).