Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics

DF 4.6: Invited Talk

Monday, February 25, 2008, 16:35–17:00, EB 107

MIM Capacitors for Wireless Communication Technologies — •Christian Wenger — IHP, Im Technologiepark 25, 15236 Frankfurt Oder

The high-k Metal-Insulator-Metal (MIM) capacitor BEOL integration into circuits for wireless communication is characterized by the efforts toward increasing the capacitance density, reducing the leakage current density and improving the voltage linearity. In particular, the achievement of sufficient capacitance voltage linearity in high-k MIM capacitors is still a challenge. Based on fundamental physical effects, the origin of the quadratic voltage dependence of high-k MIM capacitors will be presented.