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Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 10: Semiconductor Nanophotonics: Materials, Models, Devices - Novel Concepts

DS 10.3: Vortrag

Montag, 25. Februar 2008, 18:15–18:30, H 2032

High-power wavelength stabilized 970-nm-range Tilted Cavity Laser — •G. Fiol1, L.Ya. Karachinsky1,2, I.I. Novikov2, M. Kuntz1, Yu.M. Shernyakov2, N.Yu. Gordeev2, M.V. Maximov2, V.A. Shchukin1,2, N.N. Ledentsov1,2, and D. Bimberg11Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, D-10623 Berlin, Germany — 2A.F.Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia

Tilted Cavity Lasers (TCL) present an unexpensive all-epitaxial alternative to DFB- or DBR-lasers for wavelength stabilization avoiding lithographie. Broad-area (100 micrometer) devices, based on a GaAs/GaAlAs waveguide and GaInAs quantum wells emitting in the 970 nm spectral range, showed high temperature stability of the lasing wavelength (0.13 nm/K), low threshold current density (300 A/cm2), a high power operation (> 7 W in pulsed mode and > 1.5 W in continuous wave mode), a high spectral stability at high output power, and a narrow vertical far field beam divergence (FWHM ≈  20 degrees). 4 mm wide ridge lasers demonstrated spatial and spectral single mode continuous wave (cw) operation with a side mode suppression ratio (SMSR) up to 41.3 dB. Small signal modulation bandwidth of 3 GHz with a resonance peak of 6 dB at the relaxation oscillation frequency was measured for a 870 micrometer long device. TCL modulation efficiency is 0.36 GHz/(mA)1/2. S-parameter measurements indicate that much higher frequencies may be expected in case of more advanced processing and/or shorter cavity lengths.

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