Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...)
DS 11.1: Vortrag
Dienstag, 26. Februar 2008, 09:30–09:45, H 2013
New possibilities in high sensitivity Low Energy Ion Scattering (LEIS) for probing the outermost atomic layer — •Thomas Grehl1, Ewald Niehuis1, Rik ter Veen2, and Hidde Brongersma2 — 1ION-TOF GmbH, Heisenbergstr. 15, 48149 Münster, Germany — 2Calipso BV, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
With a recently developed high sensitivity Low Energy Ion Scattering (LEIS) instrument, a range of new applications arises for this extremely surface sensitive analytical technique. Known capabilities of LEIS are the selective characterisation and quantification of the atomic composition of the outermost atomic layer, i. e. precisely the atoms that control properties like catalytic performance, adhesion, wetting, corrosion, etc.
New possibilities such as surface imaging, sputter as well as non-destructive (static) profiling and even higher sensitivity for light elements have been added. The energy range of the primary ion source of up to 8 keV allows an improved mass resolution, thus enabling a better separation of the heaviest elements. In addition, a time-of-flight filter dramatically improves the detection limit for light elements. This filter suppresses the signal arising from sputtered ions, while scattered ions reach the detection system unhindered.
In this contribution, we show the utilization of these new capabilities to a range of samples and applications. Furthermore, we will show how LEIS can benefit from the combination with the complementary technique Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), which adds ppb - ppm sensitivity, lateral resolution of 100 nm and chemical information.