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DS: Fachverband Dünne Schichten
DS 11: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...)
DS 11.3: Talk
Tuesday, February 26, 2008, 10:00–10:15, H 2013
100% epi-Ge layers on engineered oxide heterostructures on Si — •Peter Rodenbach1, Alessandro Giussani1, Jose Ignacio Pascual2, Dorin Geiger3, Hannes Lichte3, Peter Storck4, and Thomas Schroeder1 — 1IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt Oder — 2Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin — 3Technical University Dresden, Zellescher Weg 16, 01062 Dresden — 4Siltronic AG, Hans-Seidel-Platz 4, 81737 München
Gallium-arsenide is a promising candidate for photo-voltaic systems due to its high efficiency factor, but has been reserved to space applications, owing this fact to the tremendous production costs. By providing an affordable Ge layer as a GaAs substrate, this technology might take a big step towards terrestrial use. Our group chose a 100% Ge on insulator technology approach, by epitaxially grown Ge epilayers on engineered oxide heterostructures on top of the Si(111) material system. In this case a cubic praseodymium-oxide buffer film is utilized. The MBE grown heterostructure has been examined by in-situ RHEED and ex-situ XRR, which both prove the smoothness of the closed (111)-oriented Germanium epi-layer. Furthermore the determination of the structural composition by GIXRD and XRD pole-figures show the single-crystalline and twin-free A-B-A stacking nature of the Si(111)-Pr oxide-Epi-Ge(111) system. In addition the defect behaviour, especially stacking faults, is discussed based on the results obtained by TEM.