Berlin 2008 – scientific programme
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DS: Fachverband Dünne Schichten
DS 11: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...)
DS 11.4: Talk
Tuesday, February 26, 2008, 10:15–10:30, H 2013
Lattice engineering of dielectric heterostructures on Si by isomorphic oxide - on - oxide epitaxy — •Andreas Wilke1, Olaf Seifarth1, Ioan Costina1, Rakesh Sohal1, Peter Zaumseil1, Jose Ignacio Pascual2, Peter Storck3, and Thomas Schroeder1 — 1IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt Oder — 2Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin — 3Siltronic AG, Hans-Seidel Platz 4, 81737 München
We are examining a new mixed oxide buffer system for the integration of functional semiconductors via heteroepitaxy on the Si (111) material platform, namely the flexible isomorphic oxide - on - oxide epitaxy approach of Y2O3 on cubic Pr2O3 with the ability to tune the buffer lattice constant. Our GI-XRD measurements prove the growth of high quality single crystalline Y2O3 on the cubic Pr2O3 (111) / Si (111) support system. Depth profiling X-ray diffraction shows that the growth mechanism of Y2O3 on cubic Pr2O3 is determined by the formation of a transition layer with variable lattice parameters, either due to strain or due to an interface reaction. In order to elucidate this question, in-situ XPS, UPS and RHEED measurements were applied.