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DS: Fachverband Dünne Schichten

DS 11: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...)

DS 11.5: Vortrag

Dienstag, 26. Februar 2008, 10:30–10:45, H 2013

ToF-SIMS Analysis of thin Al_1−xSi_xO_y layers — •Pawel Michalowski¹, Gert Jaschke², Jens Steinhoff², and Steffen Teichert² — ¹Fraunhofer Center Nanoelektronische Technologien, Dresden — ²Qimonda, Dresden

Recent interest in manufacturing new generation of memory devices based on high-k materials requires parallel development of proper analytic techniques. This work focuses on Secondary Ion Mass Spectroscopy (SIMS) measurements on atomic layer deposited Al_1−xSi_xO_y composite materials in form of thin films in range of 5-20 nm. SIMS is a very sensitive method for contamination monitoring. Based on standards created with Rutherford Backscattering Spectrometry (RBS) SIMS proved to be useful for identification of the composition of unknown samples. Recent measurements are aimed to determine diffusion of silicon from substrate into a sample during the annealing process. This work can also provide useful information which can help to deeply understand what processes occurs in the material during the annealing under different temperature conditions. SIMS is a very promising technique for multi-purpose characterization of different materials and further optimization of measurement conditions and proper interpretation of results will be performed.