Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 16: Functional Oxides
DS 16.6: Vortrag
Dienstag, 26. Februar 2008, 19:00–19:15, H 2032
Structure and electronic properties of Scandate/Titante multilayers determined by high-resolution TEM/STEM and EELS — Martina Luysberg1, •David Avila1, Markus Boese1, Tassilo Heeg2, and Jürgen Schubert2 — 1Institut für Festkörperforschung und Ernst Ruska-Centrum, Foschungszentrum Jülich, 52425 Jülich — 2Institut für Bio- und Nanosysteme, Foschungszentrum Jülich, 52425 Jülich
Because of their large dielectric constant rare earth scandates are promising candidates for the replacement of conventional gate oxides in MOSFET devices. In addition, they have a large potential to serve as substrate material for the epitaxial growth of perovskites, which are strained according to the lattice mismatch. The strain engineering of earth alkali titanate layers allows to tune their dielectric properties.
Here we report on structural and electronic properties of epitaxially grown DyScO3/SrTiO3 multilayers. Aberration corrected, high resolution TEM reveals prefect epitaxial layers, and allows for measurements of the strain. Aberration corrected STEM in connection with high resolution EELS gives information about the chemical and electronic properties. In particular, the near edge fine structure of the titanium L2,3-edge shows a reduced crystal field splitting within the strained STO layers compared to cubic STO substrates. These results will be discussed in view of ferroelectric properties.