Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.14: Poster
Dienstag, 26. Februar 2008, 09:30–13:30, Poster A
Optical and structural analyses of evaporated thin films of Ga2Se3 and In2Se3 for solar cells — •Raik Hesse, Raquel Caballero, Daniel Abou-Ras, Christian A. Kaufmann, Thomas Unold, and Hans-Werner Schock — Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin
Ga2Se3 and In2Se3 are used as precursor layers for Cu(In,Ga)Se2 thin films, which are applied as solar absorbers for photovoltaics. These precursor layers were deposited at various substrate temperatures ranging from 250∘C to 450∘C on pure glass substrates and on Mo-coated glass substrates. The composition and thickness of the Ga2Se3 and In2Se3 layers can be controlled in-situ by laser (LLS) and white light scattering (WLS). Controlling these parameters is essential since they affect the electrical properties of the Cu(In,Ga)Se2 layer and therefore the performance of the solar cell. The samples were analysed by optical transmission and reflection measurements in order to determine refractive indexes and band-gap energies complementary to the LLS and WLS results. Ga2Se3 and In2Se3 were also studied by means of X-ray diffraction (XRD), scanning and transmission electron microscopy, energy dispersive x-ray spectroscopy and grazing-incidence XRD in order to identify different phases and interdiffusion. The formation of a (Ga,In)2Se3 solid solution was detected and analysed.