Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.18: Poster

Tuesday, February 26, 2008, 09:30–13:30, Poster A

Hard X-ray Photoemission Investigations on Multilayer Coatings for X-ray Optical Devices — •Mihaela Gorgoi¹, Franz Schäfers¹, Christine Borel², and Walter Braun¹ — ¹BESSY GmbH, Berlin, Germany — ²ESRF, Grenoble, France

Many important properties of thin films are determined by the unique features of the interface atoms. A non-destructive way of accessing the electronic properties of buried interfaces is employing high kinetic energy photoelectron spectroscopy (HIKE). State-of-the art Mo/Si multilayers to be used for EUV-lithography and polarisation analysis were investigated by means of HIKE. The measurements were performed at BESSY at the KMC-1 beamline employing the HIKE end-station. A specific example refers to the Mo/Si sample that has a multilayer repetition spacing of d=2.52 nm. To modify the interfacial quality of the multilayers, the samples were heated to a preset temperature, and then subsequently cooled to room temperature, at which time the spectra were taken. The recorded data for 2010 eV excitation energy show different energy shifts occurring in the energy position of the Mo 3d and Si 1s, 2p core levels. Similar behaviour is found at a different probing depth given by 6 keV excitation energy. These results will be correlated with ex-situ x-ray reflectivity measurements performed on the sample before and after the annealing process. A correspondence between the structural changes occurring in the sample and the quality of the interfaces reflected in the electronic properties is pursued.