Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.29: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Strong Er luminescence at 1533 nm in rapid thermal annealed Si-rich SiO₂ layers co-implanted with Er — •Aloke Kanjilal, Lars Rebohle, Matthias Voelskow, Wolfgang Skorupa, and Manfred Helm — Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, PO Box 51 01 19, 01314 Dresden, Germany

The Er-doped SiO₂ layers containing Si nanocrystals (Si-ncs) have attracted considerable interest for a decade in realizing efficient light sources at about 1540 nm, which coincides with the telecommunication wavelength. Although about two orders of magnitude Er luminescence has been noticed in long time annealed sputtered deposited samples, observation of such high efficiency in ion implantation processed samples is scarce in literature. Recently, we have succeeded in producing such a system by a combination of sequential Si and Er implantations and rapid thermal annealing. The processing conditions have been optimized for achieving maximum Er photoluminescence (PL) at 1533 nm at the expense of the Si-nc related PL band peaking at 870 nm according to the quantum confinement (QC) model, taking the advantage of the visible-range pumping of Er ions by Si-ncs. Spectral analyses suggest that the appearance of a broad PL band at 870 nm can be explained in the light of the interfacial state mediated recombination of carriers in the Si-ncs according to the QC model. The energy migration from Si-ncs to the nearby Er ions has further been manifested using time-resolved PL measurements.