Berlin 2008 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.2: Poster
Tuesday, February 26, 2008, 09:30–13:30, Poster A
Relaxation effects in NiMnSb-Half-Heusler thin films — •A. Stahl1, C. Kumpf1, and E. Umbach1,2 — 1Universität Würzburg, Experimentelle Physik II, 97074 Würzburg — 2Forschungszentrum Karlsruhe, 76021 Karlsruhe
The Half-Heusler alloy NiMnSb is an important material which will possibly enable the fabrication of spintronic devices due to it's unusual half-metallic properties. It can be grown in high crystalline quality on InGaAs/InP substrates, however, as for all heteroepitaxial systems mechanical stress is an important factor which influences crystalline quality, film growth, and magnetic properties.
We present several series of x-ray measurements on MBE-grown NiMnSb thin films on InP(111) and InP(001) substrates. Reciprocal space mapping and x-ray reflectivity were measured using the six-circle-diffractometer at BW2, HASYLAB, Hamburg. Structural properties like the critical thickness for pseudomorphic growth, relaxation, and interface roughnesses are discussed. Caused by different substrate orientations the systems show differences in relaxation. Furthermore the influence of exposure to air was investigated by capping some of the samples.