Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.36: Poster

Tuesday, February 26, 2008, 09:30–13:30, Poster A

Charge transient spectroscopy (QTS) on organic semiconductors and thin films — •Markus Arnold, Axel Fechner, and Dietrich R.T. Zahn — Physics Department, Chemnitz University of Technology, D-09107 Chemnitz

Charge transient spectroscopy (QTS) is an electrical measurement method related to deep-level transient spectroscopy (DLTS) developed originally by Lang [1]. With DLTS it is possible to investigate charge carrier traps by monitoring capacitance transients. The capacitance is that of the space charge region of inorganic semiconductor or Schottky diodes. Therefore one can not measure samples negligible space charge region using DLTS as is the case for organic semiconductors. The increasing interest in organic semiconductors and organic thin films provides strong motivation for the scientists study the properties of organic devices in depth. With QTS it is possible to measure fast charge reloading processes in the samples as a function of time and the temperature with different pulse voltages and pulse widths. As a result one can determine the number of the traps of e.g. in organic field-effect transistors (OFETs).

[1] D. V. Lang; Deep-level transient spectroscopy: A new method to characterize traps in semiconductors; J. Appl. Phys. 45, 3023 (1974).