Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.42: Poster
Dienstag, 26. Februar 2008, 09:30–13:30, Poster A
Morphology of ion-beam eroded Si surface: Sputtering at near normal and glancing incident angles — •Kun Zhang1, Hans Hofsäss1, Frank Rotter1, Klaus Jesiek1, Michael Uhrmacher1, Carsten Ronning1, and Johann Krauser2 — 1II. Physikalisches Institut and SFB 602, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2Fachbereich Automatisierung und Informatik, Hochschule Harz, Friedrichstraße 57-59, D-38855 Wernigerode
Surface morphology evolution induced by ion-sputter-erosion can be explained by a linear continuum theory (developed by Bradley and Harper) of the interplay between ion beam erosion roughening and surface diffusion smoothening processes. This theory predicts the evolution of quasi-periodic surface ripple-patterns, which orientate perpendicular to the beam direction for tilted incidence angles less than a critical angle θc (but quite generally, greater than about 30∘), or parallel to the beam direction for incidence angles close to grazing. In this work, we report on the evolution of Si surfaces investigated with incidence angles at two extreme cases: near sample normal direction and around the critical angle. The experiments were performed using atomic force microscopy after low-energy (2 – 5 keV) Xe+ ion irradiation at room temperature with ion-fluences from 3 · 1014 ions/cm2 to 1 · 1018 ions/cm2. After erosion at near normal direction (θ < 30∘), the surfaces are flat and isotropic, in contract to other reports. Two-dimensional nano-patterns evolve after erosion at critical angle θc.