Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.50: Poster
Dienstag, 26. Februar 2008, 09:30–13:30, Poster A
Atomic layer deposition of silicon dioxide with sub nm-precision — •Robert Zierold1,2, Julien Bachmann1,2, Yuen Tung Chong2, Chris Sturm3, Marius Grundmann3, Bernd Rheinländer3, Ulrich Gösele2, and Kornelius Nielsch1 — 1Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Germany — 2Max-Planck-Institut für Mikrostrukturphysik, Halle/Saale, Germany — 3Abteilung Halbleiterphysik, Universität Leipzig, Germany
Atomic layer deposition (ALD) is suitable for producing homogenous, thin solid films for various applications in micro- and optoelectronics. We have developed a method for the deposition of silicon dioxide by ALD. Exposure of a flat substrate to consecutive pulses of three gaseous precursors (3-aminopropyltriethoxysilane, water, ozone) deposits SiO2 in monolayer by monolayer fashion. The presence of the amino group within the silane precursor is essential to the growth. It catalyzes the cleavage of the strong Si-O bonds and thereby allows the precursor to bond to the surface.
Electron microscopy, atomic force microscopy and spectroscopic ellipsometry evidence the growth of thin, smooth and pure SiO2 films at a rate of 0.6(+/-0.1) Å per cycle. The novel process allows the conformal deposition of SiO2 into porous alumina templates as well, and yields nanotubes of high aspect ratio (~1000) with tunable diameter (40 to 160 nm) and wall thickness (1 to 50 nm). We are currently exploring applications to Bragg reflectors, complex optical heterostructures and chemically resistant coatings by this process.