Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.51: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Realisation of steady state liquid phase epitaxy for growth of polycrystalline silicon layers on amorphous substrates — •Robert Heimburger, Klaus Böttcher, Thomas Teubner, and Torsten Boeck — Institute for Crystal Growth, Berlin, Germany

The growth of polycrystalline silicon layers on amorphous substrates from metallic solutions at low temperatures is one of the present challenges to overcome the problem of producing low cost thin film solar cells. Generally, the solubility of silicon in metals with low melting point is small at these temperatures.

In order to be able to enhance mass transport of silicon to the surface, we apply a modified classical liquid phase epitaxy called steady state liquid phase epitaxy. A detailed experimental study of saturation conditions at the surface of the sample when setting up different heating arrangements will be presented. Selective adjustment of growth and dissolution of silicon at the surface of Si(100) and Si(111) can be shown. Experimental findings will be discussed by means of additional finite-element-simulations of temperature and fluid flow behaviour of the growth arrangement.