Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.58: Poster

Tuesday, February 26, 2008, 09:30–13:30, Poster A

Local variation of dispersion constants of ITO films studied by spectroscopic imaging ellipsometry — •Matthias Vaupel¹ and Mykola Vinnichenko² — ¹Nanofilm Technologie GmbH, 37081 Göttingen, Germany — ²Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O.Box 510119, 01314 Dresden, Germany

Tin-doped-indium oxide (ITO) is a degenerate n-type semiconductor with high transparency and nearly metallic conductivity. Thin films of ITO find applications as transparent electrodes in optoelectronics (including organic light emitting devices (OLEDs)), photovoltaics, and in the liquid crystal display industry. A standard route of producing ITO films is deposition by magnetron sputtering. The interaction of the magnetron plasma with the growing film surface may be employed to cause inhomogeneity of the film morphology [1]. The aim of the present work is to study the influence of the intentionally inhomogeneous plasma flow on the distribution of the ITO film thickness and optical properties (dispersion parameters: free charge density, frequency and force of the Lorentz oscillator, and the constant term) along the substrate. Variation of the film properties are investigated both on large (several milimeters) and local (several micrometers) scale.

[1] A. Rogozin, M. Vinnichenko, N. Shevchenko, A. Kolitsch, and W. Moeller, Thin Solid Films 496, 197 (2006).