Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.60: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Study of the formation mechanisms of the polycrystalline thin films of GaSb on non-orienting substrates during forced cooling of saturated solution-melt — •Andrey Sarikov¹, Yevgen Baganov², and Stanislav Shutov^1,2 — ¹V. Lashkarev Institute of Semiconductor Physics NAS Ukraine, 45 Nauki avenue, Kiev 03028, Ukraine — ²Kherson National Technical University, 24 Berislavs'ke highway, Kherson 73008, Ukraine

Thin films of crystalline GaSb on inexpensive non-orienting substrates (e. g. glass) are interesting as a basis for the production of low-cost photovoltaic and thermophotovoltaic converters. In this work, we propose a new method of obtaining thin polycrystalline GaSb films on non-orienting substrates based on a forced cooling of saturated solution-melt of Sb in Ga. The morphology of GaSb layers is studied experimentally as a function of annealing and cooling down conditions. A theoretical model of the process under investigation is suggested and the kinetics of the nucleation and growth of GaSb grains during forced cooling of saturated solution-melt is studied theoretically. The appearance of crystalline GaSb grains is found to be due to the heterogeneous nucleation at the interface of amorphous Sb/Ga+Sb solution-melt with the vacuum surrounding. The optimisation procedure for the formation of polycrystalline GaSb films on non-orienting foreign substrates with respect to process duration and final grain size is studied. The process described is also proposed to use for the formation of the polycrystalline thin films of other A3B5 semiconductors on the non-orienting foreign substrates.