Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.63: Poster
Dienstag, 26. Februar 2008, 09:30–13:30, Poster A
Influence of growth conditions on surface morphology, structural and optical properties of PbSnTe/BaF2/CaF2/Si(100) heteroepitaxial structures — •Dmitriy Ostertak1, Alexander Velichko1, Vladimir Ilyushin1, Marion Friedrich2, and Dietrich R.T. Zahn2 — 1Novosibirsk State Technical University, Novosibirsk, Russia — 2Chemnitz University of Technology, Chemnitz, Germany
Epitaxial films of group II fluoride insulators grown on silicon are used to produce semiconductor-on-insulator structures and buffer layers for heteroepitaxy. Among them, the most promising candidates are Si / CaF2 / Si and PbSnTe / BaF2 / CaF2 / Si structures which are used to manufacture high-speed radiation-resistant very large scale integrated circuits and monolithically integrated photodetector arrays. Most of the published papers are devoted to CaF2 and BaF2 epitaxy processes on silicon surfaces with (111) orientation while the (100) orientation is more attractive for solving technical applications mentioned above.
CaF2 / Si(100), BaF2 / CaF2 / Si(100) and PbSnTe/BaF2 / CaF2 / Si(100) heteroepitaxial structures were grown by Molecular-Beam Epitaxy at different growing conditions. The surface morphology was investigated by Atomic Force Microscopy (AFM). The optimal growing conditions for CaF2 on Si(100), BaF2 on CaF2 / Si(100), and PbSnTe on BaF2 / CaF2 / Si(100) were determined from AFM measurements. Fourier transform infrared spectroscopy and spectroscopic ellipsometry were used to study optical properties and to measure thickness of these films. The influence of different growth conditions on optical and structural properties is discussed.