Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 18: Poster: Towards Molecular Spintronics, Organic Thin Films, Optical Layers, Vibrational Spectroscopy, Tayloring organic interfaces

DS 18.16: Poster

Tuesday, February 26, 2008, 14:30–19:30, Poster A

Growth monitoring of CuPc on H-Si(100) and In/CuPc interface formation Studied by Raman Spectroscopy — Marius Toader, •Philipp Schäfer, Cameliu Himcinschi, and Dietrich R T Zahn — Chemnitz University of Technology, Semiconductor Physics, D-09107, Chemnitz, Germany

Copper phthalocyanine (CuPc) layers deposited under ultra high vacuum conditions using organic molecular beam deposition onto hydrogen passivated silicon H-Si(100) substrates were investigated using Raman spectroscopy. Different emission lines (from 488 nm to 676 nm) of Ar or Kr lasers were used for excitation in a backscattering geometry. In situ on-line growth monitoring was performed in order to determine influence of the thickness on the internal molecular vibrations. The Raman spectra, recorded in different polarization configurations, macro and micro configurations, in situ and ex situ respectively, were used to estimate the orientation of CuPc molecules in the layers. Novel devices based on organic semiconductors such as organic field effect transistors or organic light emitting diodes require metallic contacts. Therefore, the interface between metals and organic semiconductors require special attention. In situ Raman scattering was thus also employed to assess the In/CuPc interface formation.