Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 18: Poster: Towards Molecular Spintronics, Organic Thin Films, Optical Layers, Vibrational Spectroscopy, Tayloring organic interfaces

DS 18.39: Poster

Tuesday, February 26, 2008, 14:30–19:30, Poster A

Application of Raman Spectroscopic Techniques in the Characterization of Nanostructured Semiconductors and Semiconductor Microstructures — •Dimitra Papadimitriou — National Technical University of Athens, Faculty of Applied Sciences, Department of Physics, GR-15780 Athens, Greece

Applications of Raman spectroscopic techniques in basic and applied research studies are reviewed. Emphasis is given to the characterization of structural phases, phase-transformation, and nanometric scale effects in nanostructured semiconductors by Raman and the validation of strain-stress effects in semiconductor microstructures by micro-Raman Spectroscopy. In particular: a) applications of combined Raman scattering and photoluminescence emission techniques in the determination of the pressure dependence of the energy band-gap and the transformation pressure of nanocrystalline (porous) silicon under high hydrostatic pressure are presented [1], b) applications of the Raman selection rules in the structural characterization of light emitting silicon quantum wires are discussed [2], and c) the relevance of micro-Raman techniques for the characterization of elastic strain in porous silicon microstructures is demonstrated [3].

References: [1] D. Papadimitriou, Y.S. Raptis and A.G. Nassiopoulou, Phys. Rev. B 58(21), 14089, (1998). [2] D. Papadimitriou and A.G. Nassiopoulou, J. Appl. Phys. 84(2), 1059 (1998). [3] D. Papadimitriou, C. Tsamis, A. Nassiopoulou, Sensors and Actuators B: Chemical 103(1-2), 356 (2004).