Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 20: Organic Polymer-Metal Interfaces (SYSA 7)
DS 20.4: Vortrag
Mittwoch, 27. Februar 2008, 18:45–19:00, H 2013
Near Infrared Sensitivity of PbS Quantum Dot Sensitized Organic Photodiodes — •Tobias Rauch1,4, Michaela Böberl1,2, Maksym Kovalenko3, Sandro Tedde1, Uli Lemmer4, Jens Fürst5, Wolfgang Heiss3, and Oliver Hayden1 — 1Siemens AG, CT MM 1, D-91058 Erlangen, Germany — 2CD Laboratory for Surface Optics, Universität Linz, A-4040 Linz, Austria — 3Institute of Semiconductor and Solid State Physics, Universität Linz, A-4040 Linz, Austria — 4Light Technology Institute, Universität Karlsruhe (TH), D-76131 Karlsruhe — 5Siemens AG, MED RVV, D-91058 Erlangen, Germany
Composites of colloidal semiconductor quantum dots (QDs) and semiconducting polymers expand the sensitivity of organic photodetectors beyond the visible spectrum (> 780 nm).
Blending the photoactive P3HT:PCBM layer of our bulk heterojunction photodetectors with near-infrared sensitive PbS QDs pushes the spectral response of the detector up to wavelengths of 1500 nm. The QDs show a photoconductive gain linearly increasing with the bias voltages. At 1300 nm, the photodetectors yield external quantum efficiencies of 8% remaining constant over more than 3 decades of irradiation intensity. Good signal-to-noise ratios can be achieved for signals up to 10 kHz.
The sensitization of organic photodetectors with colloidal QDs enables organic optolectronics to enter the field of IR related applications like IR imaging, security sensing and scanning.