Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 21: High-k Dielectric Materials - Synthesis, Properties, Applications

DS 21.1: Invited Talk

Wednesday, February 27, 2008, 14:30–15:00, H 2032

Challenges and Chances with new materials in semiconductor device applications — •Stefan Jakschik and Karl-Heinz Küsters — Qimonda Dresden GmbH & Co. OHG, Königsbrücker Strasse 180, 01099 Dresden, Germany

With entering sub 50nm nodes transistor scaling is leaving the era of traditional scaling and performance gain as well as miniaturization is achievable only by introducing further innovative performance boosters. A continuous key question of scaling is leakage control and voltage scaling which is answered nowadays by introducing materials with a high dielectric constant in MOS transistors, DRAM capacitors and FLASH storage devices. Opening the integration choice to new materials gives the chance to choose the effective oxide thickness and the work-function according to specific device requirements. On the other hand many new questions have to be answered.

We will show ways to design the threshold voltage of MOS devices with the right material choice, highlighting here Hf-oxide and scaled silicon oxide based systems with Titanum and Tantalum containing electrodes. Special attention is given to channel design options like fluorine and nitrogen implants as well as silicon germanium quantum wells. Investigating more thoroughly the dielectric, traps and charges has to be taken into account. These influence the leakage current as well as the reliability of the devices. Especially FLASH devices have a rigid leakage requirement though scaling is driving the application of high dielectric constant materials here as well. Among others Aluminiumoxide and Dysprosiumoxide based solutions are presented.