DS 21: High-k Dielectric Materials - Synthesis, Properties, Applications
Mittwoch, 27. Februar 2008, 14:30–16:30, H 2032
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14:30 |
DS 21.1 |
Hauptvortrag:
Challenges and Chances with new materials in semiconductor device applications — •Stefan Jakschik and Karl-Heinz Küsters
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15:00 |
DS 21.2 |
Hauptvortrag:
Are Optical Measurements Sensitive to Quantum Confinement? — •Alain Diebold
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15:30 |
DS 21.3 |
Broadband dielectric response of CaCu3Ti4O12: significant intrinsic properties — •Stephan Krohns, Christian Kant, Torsten Rudolf, Franz Mayr, Peter Lunkenheimer, Stefan Ebbinghaus, and Alois Loidl
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15:45 |
DS 21.4 |
Modelling a nanoscale ferroic OFET — •Sibylle Gemming, Gotthard Seifert, Andrey Enyashin und Lukas M. Eng
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16:00 |
DS 21.5 |
Molecular beam deposition of LaLuO3 thin films with high dielectric constant and low leakage current — •J. M. J. Lopes, U. Littmark, M. Roeckerath, St. Lenk, J. Schubert, and S. Mantl
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16:15 |
DS 21.6 |
Preparation, morphology and physical properties of nano-Ln1*xSrxMnO3 perovskites — •Rafal J. Wiglusz, Wieslaw Strek, Dariusz Hreniak, Glikeria Kakali, Anna Gaki, and Miroslaw Miller
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