Berlin 2008 –
wissenschaftliches Programm
DS 22: High-k Dielectric Materials - Synthesis, Properties, Applications
Mittwoch, 27. Februar 2008, 16:45–18:30, H 2032
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16:45 |
DS 22.1 |
Hauptvortrag:
Development of novel processes for atomic layer deposition of high-k dielectrics — •Jaakko Niinistö, Kaupo Kukli, Mikko Ritala, and Markku Leskelä
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17:15 |
DS 22.2 |
Hauptvortrag:
Towards a better understanding of the dielectric collapse in high-K BST thin film capacitors — •Regina Dittmann, Rafael Plonka, Nikolay Pertsev, Susanne Hoffmann-Eifert, and Rainer Waser
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17:45 |
DS 22.3 |
From hexagonal Pr2O3 films to lattice matched twin-free PrO2/Si(111) with cubic structure — Thomas Weisemoeller, Andreas Greuling, Sebastian Gevers, Carsten Deiter, and •Joachim Wollschläger
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18:00 |
DS 22.4 |
Structural, chemical and electrical characterization of HfNO-HfTiO high-k dielectric stack — Visorian Mikhelashvili, Gadi Eisenstein, Thangadurai Paramasivam, and •Wayne Kaplan
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18:15 |
DS 22.5 |
Photoemission and absorption spectroscopy for in situ investigations of the ALD growth — •Massimo Tallarida, Konstantin Karavaev, Dieter Schmeisser, and Ehrenfried Zschech
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