Berlin 2008 – scientific programme
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DS: Fachverband Dünne Schichten
DS 22: High-k Dielectric Materials - Synthesis, Properties, Applications
DS 22.5: Talk
Wednesday, February 27, 2008, 18:15–18:30, H 2032
Photoemission and absorption spectroscopy for in situ investigations of the ALD growth — •Massimo Tallarida1, Konstantin Karavaev1, Dieter Schmeisser1, and Ehrenfried Zschech2 — 1Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany — 2AMD Saxony LLC & Co. KG, Center for Complex Analysis, Wilschdorfer Landstr. 101, D-01109 Dresden, Germany
We have investigated the growth of Hf-oxide on Si by means of photoemission and X-ray absorption spectroscopy using synchrotron radiation at Bessy, Berlin. The Hf-oxide layers were grown via atomic layer deposition (ALD) using an in-situ ALD reactor attached to the investigation chamber. The XPS and XAS spectra were measured after every deposition cycle by transferring the sample into the investigation chamber without breaking the vacuum. From the experimental data we have obtained information about the early stages of the Hf-oxide growth, concerning in particular the reactivity of the interface with Si. Due to the possibility to study the layers after every cycle and with different oxidation parameters without exposing them to contaminants, the in situ investigation revealed to be a very important method to understand the growth properties of Hf-oxide.